IXYS has extended its range of IGBT Modules to include the industry popular “E+”Module package for 6-Pack configuration, utilizing NPT3 IGBT technology at 1200V and 1700V. This high current package ...

Mitsubishi Electric has introduced a high voltage integrated circuit to drive igbt power modules dedicated to 400V ac lines. The M81738FP is suitable for 1200V class igbt devices and is said to have ...

HEFEI, China, Oct. 01, 2022 (GLOBE NEWSWIRE) -- Lakesemi announced that it has developed a new generation silicon carbide full bridge with rectifier module — LSCT30PV120B9G. This new module has a very ...

The global Direct Liquid Cooling IGBT Module Market is entering a pivotal decade of transformation as industries shift toward high-efficiency, thermally robust power electronics. Valued at USD 144.3 ...

(http://www.researchandmarkets.com/research/rbrk35/infineon) has announced the addition of the "Infineon EconoPACK4 1200V IGBT4 Module - Reverse Costing Analysis ...

International Rectifier, IR introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200V IGBT platform utilizes IR's latest generation trench ...

Microsemi Corporation announced a line of intelligent half bridge Insulated Gate Bipolar Transistor (IGBT) standard power modules, including five products that simplify system design and are each ...

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial ...

ROHM has developed a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment. The 300A rated current is said to make the ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V ...