High Electron Mobility Transistors (HEMTs) represent a pivotal class of devices in modern semiconductor technology, valued for their exceptional frequency performance and low noise characteristics.

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the addition of new space screened versions of its popular 650 V, 60 A high reliability gallium nitride high electron mobility ...

The Zeta-Series optical profilers provide accurate measurement and automated analysis of high aspect ratio structures such as HEMT vias using non-destructive and high throughput metrology techniques.

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the new TD99102 UltraCMOS ® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip ...

One month after announcing a ferroelectric semiconductor at the nanoscale thinness required for modern computing components, a team has now demonstrated a reconfigurable transistor using that material ...

The TPH2006PS is said to be the first GaN high electron mobility transistor (HEMT) on SiC substrate to receive JEDEC qualification. The 600-V HEMT device comes from Transphorm Inc., Goleta, Calif., ...

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...

High electron mobility transistors (HEMTs) represent a critical evolution in semiconductor technology by harnessing the advantages of wide bandgap materials such as gallium nitride (GaN) to achieve ...