EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE ...
OTTAWA, Feb. 28, 2018 (GLOBE NEWSWIRE) -- GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most ...
I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...
OTTAWA, Ontario, Canada—GaN Systems, a global provider of GaN (gallium nitride) power semiconductors, has announced the industry’s highest current 650 V GaN E-HEMTs with the addition of the 150 A, 650 ...
The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...
OTTAWA, Canada – June 15, 2022 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today introduced a new transistor in the industry’s broadest portfolio of GaN power ...
Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...
EPC launches EPC2367, a 100 V GaN FET with ultra-low on-resistance EPC launches EPC2367, a 100 V GaN FET with ultra-low 1.2 mΩ RDS(on), superior efficiency, and thermal performance, advancing AI, ...
JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, announces the publication of JEP182: Test Method for Continuous-Switching ...
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