Powdec K.K. announced that, together with Sheffield University, they have succeeded in developing breakthrough high voltage Gallium Nitride (GaN) power transistors. Powdec K.K. announced that, ...

The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers.

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...

The rapid growth of critical technologies such as 5G telecommunications and electric mobility demands higher power densities, faster switching frequencies, and greater thermal resilience than is ...